MHT2012NT1

Mfr.Part #
MHT2012NT1
Manufacturer
NXP Semiconductors
Package/Case
PQFN-24
Datasheet
Download
Description
RF Amplifier RF LDMOS Integrated Power Amplifier, 2450 MHz, 12.5 W CW, 28 V

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
NXP Semiconductors
Product Category :
RF Amplifier
Gain :
29.7 dB
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
SMD/SMT
OIP3 - Third Order Intercept :
43 dBm
Operating Frequency :
2.4 GHz to 2.5 GHz
Operating Supply Current :
75 mA
Operating Supply Voltage :
28 V
P1dB - Compression Point :
42.3 dBm
Package / Case :
PQFN-24
Packaging :
Reel
Series :
MHT2012N
Technology :
SI
Type :
Power Amplifiers
Datasheets
MHT2012NT1

Manufacturer related products

  • NXP Semiconductors
    IC & Component Sockets MPC5553 324-PIN BGA TO P
  • NXP Semiconductors
    IC & Component Sockets MPC5553 416-PIN BGA TO P
  • NXP Semiconductors
    IC & Component Sockets MPC5567 324-PIN BGA TO P
  • NXP Semiconductors
    Display Modules i.MX RT1050 4.3in LCD Display
  • NXP Semiconductors
    Display Modules WVGA display module for NXP i.MX and VFxxx R family evaluation platforms

Catalog related products

  • Qorvo
    RF Amplifier Band 7 0.5W Doherty Small cell PA
  • Qorvo
    RF Amplifier 100W 50V 3.1-3.5GHz GaN PA EHS
  • Mini-Circuits
    RF Amplifier Gain Block, 10 - 30000 MHz, 50?
  • Qorvo
    RF Amplifier QPA1314D sellable die
  • Mini-Circuits
    RF Amplifier Gain Block, 500 - 30000 MHz, 50?

Related products

Part Manufacturer Stock Description
MHT2012N-2450 NXP Semiconductors 5 RF Development Tools MHT2012N 2400-2500 MHz Reference Circuit