- Manufacturer :
- Toshiba
- Product Category :
- RF MOSFET Transistors
- Gain :
- 22.5 dB
- Id - Continuous Drain Current :
- 30 mA
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 800 MHz
- Package / Case :
- SOT-343-4
- Packaging :
- Cut Tape, MouseReel, Reel
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 12.5 V
- Datasheets
- 3SK293(TE85L,F)
Manufacturer related products
-
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 8A low Vclamp: 7.5V Rdyn: 0.2Ohm Vrwm: 3.6V SOD-962 -
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.1Ohm VBR:6.2V Vrwm: 5.5V SOD-882
-
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.12Ohm VBR:5.0V Vrwm: 3.6V SOD-882
-
ToshibaESD Suppressors / TVS Diodes Uni-Directional ESD Protection Diode VRWM= 3.3V Rdy=0.3 Ohm CT=0.6pF
-
Catalog related products
-
STMicroelectronicsRF MOSFET Transistors 250 W 28/32 V RF power LDMOS transistor from HF to 1 GHz
-
STMicroelectronicsRF MOSFET Transistors 400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
-
STMicroelectronicsRF MOSFET Transistors 180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor
-
STMicroelectronicsRF MOSFET Transistors 75 W, 28 V, 3.1 to 3.6 GHz RF power LDMOS transistor
-
STMicroelectronicsRF MOSFET Transistors 150 W, 28/32 V RF power LDMOS transistor from HF to 1 GHz
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| 3SK291(TE85L,F) | Toshiba | 4,291 | RF MOSFET Transistors N-Ch High Freq 30mA 0.15W 12.5V |
| 3SK291(TE85L,F) | Toshiba | 4,291 | RF MOSFET Transistors N-Ch High Freq 30mA 0.15W 12.5V |
| 3SK293(TE85L,F) | Toshiba | 3,616 | RF MOSFET Transistors N-Ch High Freq 30mA 0.1W 12.5V |
| 3SK294(TE85L,F) | Toshiba | 2,996 | RF MOSFET Transistors RF High Freq VHF/UHF SMQ 4-Pin N-Ch 0.1 |
| 3SK294(TE85L,F) | Toshiba | 2,996 | RF MOSFET Transistors RF High Freq VHF/UHF SMQ 4-Pin N-Ch 0.1 |
