MJD31CQ-13

Mfr.Part #
MJD31CQ-13
Manufacturer
Diodes Incorporated
Package/Case
TO-252-3
Datasheet
Download
Description
Bipolar Transistors - BJT Pwr Mid Perf Transistor

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Manufacturer :
Diodes Incorporated
Product Category :
Bipolar Transistors - BJT
Collector- Base Voltage VCBO :
100 V
Collector- Emitter Voltage VCEO Max :
100 V
Collector-Emitter Saturation Voltage :
1.2 V
Configuration :
Single
Emitter- Base Voltage VEBO :
6 V
Gain Bandwidth Product fT :
3 MHz
Maximum DC Collector Current :
3 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Package / Case :
TO-252-3
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
15 W
Qualification :
AEC-Q101
Transistor Polarity :
NPN
Datasheets
MJD31CQ-13

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