A1C15S12M3-F

Mfr.Part #
A1C15S12M3-F
Manufacturer
STMicroelectronics
Package/Case
ACEPACK1
Datasheet
Download
Description
IGBT Modules PTD NEW MAT & PWR SOLUTION

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Manufacturer :
STMicroelectronics
Product Category :
IGBT Modules
Collector- Emitter Voltage VCEO Max :
1200 V
Collector-Emitter Saturation Voltage :
1.95 V
Configuration :
Converter Inverter Brake
Continuous Collector Current at 25 C :
15 A
Gate-Emitter Leakage Current :
500 nA
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 40 C
Package / Case :
ACEPACK1
Packaging :
Tray
Pd - Power Dissipation :
142.8 W
Product :
IGBT Silicon Modules
Datasheets
A1C15S12M3-F

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