FP50R12KT4G

Manufacturer :

Infineon Technologies

Product Category :

IGBT Modules

Collector- Emitter Voltage VCEO Max :

1200 V

Collector-Emitter Saturation Voltage :

2.25 V

Configuration :

3-Phase

Continuous Collector Current at 25 C :

50 A

Gate-Emitter Leakage Current :

100 nA

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 40 C

Package / Case :

Econo 3

Packaging :

Tray

Pd - Power Dissipation :

280 W

Product :

IGBT Silicon Modules