RGS80TSX2HRC11

Mfr.Part #
RGS80TSX2HRC11
Manufacturer
ROHM Semiconductor
Package/Case
TO-247N-3
Datasheet
Download
Description
IGBT Transistors 1200V 40A FIELD STOP TRENCH

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
ROHM Semiconductor
Product Category :
IGBT Transistors
Collector- Emitter Voltage VCEO Max :
1200 V
Collector-Emitter Saturation Voltage :
1.7 V
Configuration :
Single
Continuous Collector Current at 25 C :
80 A
Maximum Gate Emitter Voltage :
30 V
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
Through Hole
Package / Case :
TO-247N-3
Packaging :
Tube
Pd - Power Dissipation :
555 W
Qualification :
AEC-Q101
Technology :
SI
Datasheets
RGS80TSX2HRC11

Manufacturer related products

Catalog related products

  • Infineon Technologies
    IGBT Transistors HOME APPLIANCES 14
  • Infineon Technologies
    IGBT Transistors HOME APPLIANCES 14
  • ROHM Semiconductor
    IGBT Transistors 10us Short-Circuit Tolerance, 1200V 40A, Field Stop Trench IGBT
  • ROHM Semiconductor
    IGBT Transistors 10us Short-Circuit Tolerance, 1200V 15A, Automotive Field Stop Trench IGBT
  • Infineon Technologies
    IGBT Transistors HOME APPLIANCES 14

Related products

Part Manufacturer Stock Description
RGS80TS65HRC11 ROHM Semiconductor 447 IGBT Transistors 650V 40A FIELD STOP TRENCH
RGS80TSX2DGC11 ROHM Semiconductor 1,750 IGBT Transistors 10us Short-Circuit Tolerance, 1200V 40A, Built-In FRD, Field Stop Trench IGBT
RGS80TSX2DHRC11 ROHM Semiconductor 427 IGBT Transistors 1200V 40A FIELD STOP TRENCH
RGS80TSX2GC11 ROHM Semiconductor 370 IGBT Transistors 10us Short-Circuit Tolerance, 1200V 40A, Field Stop Trench IGBT