TPS1100DR

Mfr.Part #
TPS1100DR
Manufacturer
Texas Instruments
Package/Case
SOIC-8
Datasheet
Download
Description
MOSFET Single P-Ch Enh-Mode MOSFET

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Manufacturer :
Texas Instruments
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
1.6 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
SOIC-8
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
791 mW
Qg - Gate Charge :
5.45 nC
Rds On - Drain-Source Resistance :
400 mOhms
Technology :
SI
Transistor Polarity :
P-Channel
Vds - Drain-Source Breakdown Voltage :
15 V
Vgs - Gate-Source Voltage :
- 15 V, + 2 V
Vgs th - Gate-Source Threshold Voltage :
1.5 V
Datasheets
TPS1100DR

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