IPD60R1K4C6ATMA1

Mfr.Part #
IPD60R1K4C6ATMA1
Manufacturer
Infineon Technologies
Package/Case
TO-252-3
Datasheet
Download
Description
MOSFET LOW POWER_LEGACY

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Manufacturer :
Infineon Technologies
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
3.2 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
TO-252-3
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
28.4 W
Qg - Gate Charge :
9.4 nC
Rds On - Drain-Source Resistance :
1.26 Ohms
Technology :
SI
Tradename :
CoolMOS
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
600 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
2.5 V
Datasheets
IPD60R1K4C6ATMA1

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