IPSA70R1K4P7SAKMA1

Manufacturer :

Infineon Technologies

Product Category :

MOSFET

Channel Mode :

Enhancement

Id - Continuous Drain Current :

4 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 40 C

Mounting Style :

Through Hole

Number of Channels :

1 Channel

Package / Case :

TO-251-3

Packaging :

Tube

Pd - Power Dissipation :

22.7 W

Qg - Gate Charge :

4.7 nC

Rds On - Drain-Source Resistance :

1.15 Ohms

Technology :

SI

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

700 V

Vgs - Gate-Source Voltage :

- 16 V, + 16 V

Vgs th - Gate-Source Threshold Voltage :

2.5 V