QPD1004SR

Mfr.Part #
QPD1004SR
Manufacturer
Qorvo
Package/Case
DFN-8
Datasheet
Download
Description
RF JFET Transistors .03-1.2GHz 25W 50V GaN

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Manufacturer :
Qorvo
Product Category :
RF JFET Transistors
Gain :
20.8 dB
Id - Continuous Drain Current :
3.6 A
Maximum Drain Gate Voltage :
55 V
Maximum Operating Temperature :
+ 85 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
SMD/SMT
Operating Frequency :
30 MHz to 1200 MHz
Output Power :
40 W
Package / Case :
DFN-8
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
27.6 W
Technology :
GaN-on-SiC
Transistor Polarity :
N-Channel
Transistor Type :
HEMT
Vds - Drain-Source Breakdown Voltage :
50 V
Vgs - Gate-Source Breakdown Voltage :
145 V
Datasheets
QPD1004SR

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