- Manufacturer :
- MACOM
- Product Category :
- RF JFET Transistors
- Gain :
- 16 dB
- Id - Continuous Drain Current :
- 1.4 A
- Maximum Operating Temperature :
- + 200 C
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 6 GHz
- Package / Case :
- SOIC-8
- Packaging :
- Tray
- Pd - Power Dissipation :
- 11.6 W
- Technology :
- GaN-on-Si
- Transistor Polarity :
- N-Channel
- Transistor Type :
- HEMT
- Vds - Drain-Source Breakdown Voltage :
- 100 V
- Datasheets
- NPTB00004A
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