NPT35015D

Manufacturer :

MACOM

Product Category :

RF JFET Transistors

Gain :

10.5 dB

Id - Continuous Drain Current :

5 A

Maximum Operating Temperature :

+ 200 C

Mounting Style :

SMD/SMT

Operating Frequency :

3.3 GHz to 3.8 GHz

Output Power :

1.7 W

Package / Case :

SOIC-8

Pd - Power Dissipation :

28 W

Technology :

GaN-on-Si

Transistor Polarity :

N-Channel

Transistor Type :

HEMT

Vds - Drain-Source Breakdown Voltage :

100 V