A3G35H100-04SR3
- Mfr.Part #
- A3G35H100-04SR3
- Manufacturer
- NXP Semiconductors
- Package/Case
- NI-780S-4L
- Datasheet
- Download
- Description
- RF MOSFET Transistors Airfast RF Power GaN Transistor, 3400-3600 MHz, 14 W Avg., 48 V
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- RF MOSFET Transistors
- Gain :
- 14 dB
- Id - Continuous Drain Current :
- 8.04 mA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 3400 MHz to 3600 MHz
- Output Power :
- 14 W
- Package / Case :
- NI-780S-4L
- Packaging :
- Cut Tape, Reel
- Technology :
- GaN-on-Si
- Transistor Polarity :
- Dual N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 125 V
- Datasheets
- A3G35H100-04SR3
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Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| A3G35H100-04SR3 | NXP Semiconductors | 177 | RF MOSFET Transistors Airfast RF Power GaN Transistor, 3400-3600 MHz, 14 W Avg., 48 V |
