A2G22S190-01SR3
- Mfr.Part #
- A2G22S190-01SR3
- Manufacturer
- NXP Semiconductors
- Package/Case
- NI-400S-2
- Datasheet
- Download
- Description
- RF MOSFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 36 W Avg., 48 V
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- RF MOSFET Transistors
- Gain :
- 16.5 dB
- Id - Continuous Drain Current :
- 19 mA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 1800 MHz to 2200 MHz
- Package / Case :
- NI-400S-2
- Packaging :
- Reel
- Technology :
- GaN-on-Si
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 150 V
- Datasheets
- A2G22S190-01SR3
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Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| A2G22S190-01SR3 | NXP Semiconductors | 0 | RF MOSFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 36 W Avg., 48 V |
| A2G22S251-01SR3 | NXP Semiconductors | 0 | RF Amplifier Airfast RF Power GaN Transistor, 1805-2200 MHz, 48 W Avg., 48 V |
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